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短波红外InGaAs焦平面噪声特性

Noise characteristics of short wave infrared InGaAs focal plane arrays

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摘要

为研究铟镓砷焦平面的噪声特性,设计了两种不同吸收层掺杂浓度的InGaAs外延材料,采用标准工艺制备了平面型160×128元光敏芯片,并与相同结构的读出电路?#36141;格?#21512;形成160×128元焦平面,采用改变积分时间和改变器件温度的方法,测试焦平面的信号与噪声.通过研究不同材料参数、器件性能与焦平面噪声的关系,定量分析了短波红外InGaAs焦平面的噪声特性.结果表明,焦平面噪声主要来源于焦平面耦合噪声和探测器噪声,降低InGaAs外延材料吸收层的掺杂浓度,可?#26434;行?#38477;低探测器电容,从而降低焦平面的耦合噪声?#27426;?#25506;测器噪声由探测器暗电流和工作温度影响,该噪声在长积分时间下决定了焦平面的总噪声水平.实现低暗电流、低电容特性的光敏芯片是降低焦平面噪声的有效途径.

Abstract

In order to study the noise characteristics of InGaAs focal plane arrays (FPAs), the 160×128 FPAs with different absorption layer doping concentration coupled with the same read-out circuit structures were designed and prepared. The noise characteristics at different temperature and integral time were measured. By studying the relationship between different material parameters, device performance and focal plane noise, the noise characteristics of short-wave infrared InGaAs FPAs are analyzed quantitatively. The results show that the noise mainly comes from the coupling noise of the focal plane and the noise of the detector. The detector noise is influenced by the dark current and operating temperature of the detector, which determines the total noise level of the focal plane in the long integral time. To manufacture photodetectors with low dark current and low capacitance is an effective way to reduce the focal plane noise.

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中图分类号:TN21

DOI:10.11972/j.issn.1001-9014.2019.04.020

基金项目:国家自然科学基金(61475179)

收稿日期:2018-11-15

修改稿日期:2019-05-30

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于春蕾:中国科学院上海技术物理研究所 传感技术联合国家重点实验室,上海 200083中国科学院上海技术物理研究所 红外成像材料与器件国家重点实验室,上海 200083中国科学院大学,?#26412;?100049
李雪:中国科学院上海技术物理研究所 传感技术联合国家重点实验室,上海 200083中国科学院上海技术物理研究所 红外成像材料与器件国家重点实验室,上海 200083
邵秀梅:中国科学院上海技术物理研究所 传感技术联合国家重点实验室,上海 200083中国科学院上海技术物理研究所 红外成像材料与器件国家重点实验室,上海 200083
黄松垒:中国科学院上海技术物理研究所 传感技术联合国家重点实验室,上海 200083中国科学院上海技术物理研究所 红外成像材料与器件国家重点实验室,上海 200083
龚海梅:中国科学院上海技术物理研究所 传感技术联合国家重点实验室,上海 200083中国科学院上海技术物理研究所 红外成像材料与器件国家重点实验室,上海 200083

联系人作者:于春蕾([email protected])

备注:于春蕾(1992-),女,山东日照人,博士研究生,主要研究领域为短波红外探测器. E-mail: [email protected]

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【8】Guellec F, Dubois S, De Borniol E, et al. A low-noise 15 μm pixel-pitch 640× 512 hybrid InGaAs image sensor for night vision[C]//Sensors, Cameras, and Systems for Industrial and Scientific Applications XIII. International Society for Optics and Photonics, 2012, 8298: 82980C.

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【11】Li X, Tang H J, Huang S L, et al. Study on 512×128 pixels InGaAs near infrared focal plane arrays[C]// SPIE Optical Engineering + Applications. International Society for Optics and Photonics, 2014.

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引用该论文

YU Chun-Lei,LI Xue,SHAO Xiu-Mei,HUANG Song-Lei,GONG Hai-Mei. Noise characteristics of short wave infrared InGaAs focal plane arrays[J]. Journal of Infrared and Millimeter Waves, 2019, 38(4): 528-534

于春蕾,李雪,邵秀梅,黄松垒,龚海梅. 短波红外InGaAs焦平面噪声特性[J]. 红外与毫米波学报, 2019, 38(4): 528-534

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